Toshiba Launches High-Efficiency 100V N-Channel MOSFET for Next-Generation Power Supplies

Toshiba Electronic Devices & Storage Corporation has announced the release of its latest innovation in power semiconductor technology, the “TPH2R70AR5” 100V N-channel power MOSFET. Built on Toshiba’s advanced U-MOS11-H process, the new device is engineered to meet the rigorous efficiency and performance demands of switched-mode power supplies used in data centers, communication base stations, and other high-reliability industrial environments.

The TPH2R70AR5 marks a significant leap forward in power device performance. Compared to Toshiba’s earlier U-MOSX-H series TPH3R10AQM, the new MOSFET achieves an 8% reduction in on-resistance (RDS(ON)) and a 37% reduction in total gate charge (Qg). Together, these improvements deliver a 42% boost in the key figure of merit, RDS(ON) × Qg, enabling lower conduction losses and higher switching efficiency. For designers of power electronics, these advances mean greater energy savings, reduced thermal stress, and improved overall reliability.

Another notable feature of the device is its high-speed body diode performance, achieved through Toshiba’s proprietary lifetime control technology. The diode significantly reduces reverse recovery charge (Qrr) by approximately 38%, while improving the RDS(ON) × Qrr figure of merit by 43%. This improvement translates directly into lower switching losses during reverse recovery, a critical factor for power supply systems operating at high frequencies. By minimizing wasted energy and reducing heat generation, the TPH2R70AR5 enables more compact and energy-efficient designs without compromising durability.

The MOSFET is housed in an SOP Advance (N) package, which is fully compatible with industry-standard surface-mount assembly practices. This compact and thermally efficient package allows engineers to design higher power density systems while maintaining manufacturability and board-level reliability. For applications such as large-scale data centers where space optimization and energy efficiency are top priorities, the package design offers an ideal balance between performance and practicality.

With its combination of low on-resistance, reduced gate and recovery charge, and advanced packaging, the TPH2R70AR5 is tailored for use in demanding switched-mode power supply architectures, including those found in modern data centers and telecom base stations that must handle ever-increasing workloads with maximum efficiency. As digital transformation accelerates and global data traffic continues to grow, the demand for reliable, energy-efficient power solutions is rising sharply. Toshiba’s new MOSFET directly addresses this challenge, offering designers a way to cut power losses, lower operational costs, and meet stringent sustainability targets.

By integrating process improvements with advanced packaging and diode technology, Toshiba has delivered a device that embodies the next step in the evolution of power MOSFETs. For system designers tasked with creating high-performance, energy-efficient power supplies, the TPH2R70AR5 represents not just a component upgrade, but a strategic tool to build competitive advantage in industries where efficiency and reliability are paramount.